11N50E データシート PDFこの部品の機能は「Powermos Transistors」です。 |
検索結果を表示する |
部品番号 |
11N50E PowerMOS transistors Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High ther Philips |
文字列「 11N50 」「 11N50E 」で始まる検索結果です。 |
部品説明 |
11N50 N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state Unisonic Technologies |
11N50K-MT N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N50K-MT Preliminary 11A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N50K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minim Unisonic Technologies |
1150MP 150W / 50V / Class C Avionics 1025 - 1150 Mhz 1150MP 150 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transis Advanced Power Technology |
1150PT Phase Control Thyristors SEMICONDUCTOR RRooHHSS SEMICONDUCTOR 1150PT Series RRooHHSS www.nellsemi.com Page 2 of 2 nELL |
2SA1150 TRANSISTOR (LOW FREQUENCY AMPLIFIER APPLICATIONS) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~320 • Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base vo Toshiba Semiconductor |
2SB1150 PNP SILICON DARLINGTON TRANSISTOR NEC |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |