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08N50E データシート PDF ( Data ) |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | 08N50E | FMP08N50E FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform durin |
![]() Fuji Electric |
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08N データシート - 検索結果 |
部品番号 | 部品説明 | メーカ | |
08N60 | N-Channel Enhancement Mode Field Effect Transistor Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 8A 0.89 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. |
![]() SamHop Microelectronics |
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08N50E | FMP08N50E FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche |
![]() Fuji Electric |
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08N80C3 | SPP08N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low e |
![]() Infineon Technologies |
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