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FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Equiv

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 8A 0.89 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low e