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07N60C3 データシート PDFこの部品の機能は「Power Transistor」です。 |
検索結果を表示する |
| 部品番号 |
| 07N60C3 Power Transistor SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A • Perio  Infineon  |
文字列「 07N60C3 」「 07N60C3 」で始まる検索結果です。 |
| 部品説明 |
SPA07N60C3 Cool MOS Power Transistor SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2  Infineon Technologies |
SPA07N60C3 Cool MOS Power Transistor SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 Infineon Technologies |
SPB07N60C3 Cool MOS Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance SPB07N60C3 VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Infineon Technologies |
SPB07N60C3 Cool MOS Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance SPB07N60C3 VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Infineon Technologies |
SPD07N60C3 Cool MOS& Power Transistor Final data SPD07N60C3 SPU07N60C3 VDS @ Tjmax RDS(on) ID P-TO251-3-1 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Infineon Technologies |
SPD07N60C3 Cool MOS Power Transistor Final data SPD07N60C3 SPU07N60C3 VDS @ Tjmax RDS(on) ID P-TO251-3-1 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge 650 0.6 7.3 V Ω A P-TO252-3- Infineon Technologies |
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