|
![]() |
データシート 06N80C3 PDF ( Circuit Data ) |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | 06N80C3 | SPP06N80C3 SPP06N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target app |
![]() Infineon |
![]() |
06N データシート - 検索結果 |
部品番号 | 部品説明 | メーカ | |
06N02C | N-Channel Enhancement Mode Power MOSFET FNK06N02C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V ● High Powe |
![]() FNK |
![]() |
06N03 | 25V N-Channel Enhancement Mode MOSFET PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and M |
![]() Pan Jit International |
![]() |
06N80C3 | SPP06N80C3 SPP06N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge |
![]() Infineon |
![]() |
06N03LA | IPB06N03LA IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal res |
![]() Infineon Technologies Corporation |
![]() |
Search Keywords : |
DataSheet.jpは、半導体や電子部品のデータシートをPDFファイルとして無料提供しています。 |