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S8550 データシート PDF 検索


S8550 PDF 検索 結果

番号 部品番号 部品説明 メーカ PDF
9 S8550

TRANSISTOR (PNP)

S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS(Tamb=25℃ Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) unless otherwise specified) Test conditions IE=0 IB=0 IC=

Wing Shing Computer Components
Wing Shing Computer Components
S8550 データシート pdf
8 S8550

PNP General Purpose Transistors

Datasheet.jp S8550 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. E MIT T E R 2. B A SE 3. COL L E CTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current Total Device Dis s ipation TA=2 5 C J unction Tem perature S torage, Tem perature Symbol V CE O V CB O VE

Weitron Technology
Weitron Technology
S8550 データシート pdf
7 S8550

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR  DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.  FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complem

UTC
UTC
S8550 データシート pdf
6 S8550

Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA) Complementary To S8050. Excellent HFE Linearity. Production specification S8550 Pb Lead-free Datasheet.jp APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION Type No. S8550 Marking 2TY Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless ot

BL
BL
S8550 データシート pdf
5 S8550

Si APD array

APD Si APD array S8550 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element. Datasheet.jp Features Applications l High sensitivit

Hamamatsu Corporation
Hamamatsu Corporation
S8550 データシート pdf
4 S8550

PNP Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 Collector-base voltage A V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARA

Tuofeng Semiconductor
Tuofeng Semiconductor
S8550 データシート pdf
3 S8550LT1

HIGH VOLTAGE TRANSISTOR: (PNP)

S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW (Tamb=25℃) Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT—23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage vo

Wing Shing Computer Components
Wing Shing Computer Components
S8550LT1 データシート pdf


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