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MS1307 データシート PDF 検索


Datasheet MS1307 PDF 検索 結果

番号 部品番号 部品説明 メーカ PDF
6 MS1329

RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and

Advanced Power Technology
Advanced Power Technology
MS1329 データシート pdf
5 MS1336

RF & MICROWAVE TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communicat

Advanced Power Technology
Advanced Power Technology
MS1336 データシート pdf
4 MS1337

RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe

Advanced Power Technology
Advanced Power Technology
MS1337 データシート pdf
3 MS13N30

N-Channel 30-V (D-S) MOSFET

MS13N30 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, print

Bruckewell
Bruckewell
MS13N30 データシート pdf
2 MS13N50

N-Channel MOSFET

MS13N50 500V N-Channel MOSFET Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capa

Bruckewell
Bruckewell
MS13N50 データシート pdf
1 MS13P21

P-Channel MOSFET

MS13P21 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tele

Bruckewell
Bruckewell
MS13P21 データシート pdf


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