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H945 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 H945

NPN Silicon Transistors

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H945 ¨€ APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching. ¨€ T stg ¡ ª Tj¡ª PC¡ª ABSOLUTE MAXIMUM RATINGS£¨ Storage Temperature¡ - ¡ -

Shantou Huashan Electronic Devices
Shantou Huashan Electronic Devices
H945 データシート pdf



H Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
H-1-4

UHF Hybrid Junction

UHF Hybrid Junction 5 MHz - 1 GHz Features q q q H-1-4 V2.00 C-33 Broad Frequency Range 0° - 180° Hybrid with High Isolation MIL-STD-202 Screening Available Guaranteed Specifications* (From - 55°C to + 85°C) Frequency Range Isolation (A - B Ports) 5 - 300 MHz 300 MHz - 1

Tyco Electronics
Tyco Electronics
H945 データシート pdf
H02N60SE

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H945 データシート pdf
H02N60SF

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H945 データシート pdf
H02N60SJ

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H945 データシート pdf


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