データシート PDF 検索 - DataSheet.jp

H10G データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 H10G

TO-5 Metal Can Package

Datasheet.jp H10G April 1995 10 Lead (0 230 Diameter P C ) TO-5 Metal Can Package NS Package Number H10G All dimensions are in inches (millimeters) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION A

National Semiconductor
National Semiconductor
H10G データシート pdf



H Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
H-1-4

UHF Hybrid Junction

UHF Hybrid Junction 5 MHz - 1 GHz Features q q q H-1-4 V2.00 C-33 Broad Frequency Range 0° - 180° Hybrid with High Isolation MIL-STD-202 Screening Available Guaranteed Specifications* (From - 55°C to + 85°C) Frequency Range Isolation (A - B Ports) 5 - 300 MHz 300 MHz - 1

Tyco Electronics
Tyco Electronics
H10G データシート pdf
H01N60

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced

HI-SINCERITY
HI-SINCERITY
H10G データシート pdf
H02N60SE

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H10G データシート pdf
H02N60SF

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H10G データシート pdf
H02N60SJ

N-Channel Power Field Effect Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltag

HI-SINCERITY
HI-SINCERITY
H10G データシート pdf
H0500KC25D

Fast Symmetrical Gate Turn-Off Thyristor

WESTCODE An IXYS Company Date:- 4 Aug, 2004 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H0500KC25# Absolute Maximum Ratings VDRM VRSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1)

IXYS
IXYS
H10G データシート pdf
H0500KC25E

Fast Symmetrical Gate Turn-Off Thyristor

WESTCODE An IXYS Company Date:- 4 Aug, 2004 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H0500KC25# Absolute Maximum Ratings VDRM VRSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1)

IXYS
IXYS
H10G データシート pdf


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