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C5763 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 C5763

2SC5763

Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor Datasheet.jp 2SC5763 Switching Regulator Applications Features • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1

Sanyo Semicon Device
Sanyo Semicon Device
C5763 データシート pdf



C5 Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
C5228

2SC5228

Ordering number:EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimension

Sanyo
Sanyo
C5763 データシート pdf
C503B-RBS

5-mm Red and Amber Round LEDs

Cree® 5-mm Red and Amber Round LEDs C503B-RAS/RAN/AAS/AAN (15 degrees) C503B-RBS/RBN/ABS/ABN (23 degrees) C503B-RCS/RCN/ACS/ACN (30 degrees) Data Sheet These round LED families offer superior light output for excellent readability in outdoor applications. The

CREE
CREE
C5763 データシート pdf
C566C-RFN

5mm Oval LED

Cree® 5mm Oval LED C566C-RFS/GFS/BFS/AFS C566C-RFN/GFN/BFN/AFN This oval LED is specifically designed for variable-message signs and passenger-information signs. The oval-shaped radiation pattern and high luminous intensity ensure that these devices are excellent for wide-fieldo

CREE
CREE
C5763 データシート pdf
C5127A

2SC5127A

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package with outstanding insulati

Panasonic
Panasonic
C5763 データシート pdf
C5094

2SC5094

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 2SC5094 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collect

Toshiba
Toshiba
C5763 データシート pdf
C5753

NPN SILICON RF TRANSISTOR

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin =

Renesas
Renesas
C5763 データシート pdf
C5D3xDxxxxx

Cantilever Beam Dip Solder

Thomas & Betts Electronic
Thomas & Betts Electronic
C5763 データシート pdf


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C1318

This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package.

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