2SC5929 データシート PDF 検索 |
番号 | 部品番号 | 部品説明 | メーカ | |
1 | 2SC5929 | Silicon Transistor Datasheet.jp |
![]() ETC |
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2SC5 Datasheet ( データシート ) - 検索結果 |
部品番号 | 部品説明 | メーカ | |
2SC5077A | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Power Transistors 2SC5077, 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VC |
![]() Panasonic Semiconductor |
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2SC5346 | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1982 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q Satisfactory linearity of f |
![]() Panasonic Semiconductor |
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2SC5463 | Silicon NPN RF Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5463 DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 8 V, IC = 5 mA, f = 1 GHz ·High Gain ︱S21e︱2 = 12 dB TYP. @VCE = 8 V, IC = 15 mA, f = 1 GHz APPLICATIONS ·Designed for use in V |
![]() Inchange Semiconductor |
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2SC5900 | Silicon NPN Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5900 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RAT |
![]() Inchange Semiconductor |
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2SC5089 | Silicon NPN Transistor INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5089 DESCRIPTION ·High Gain Bandwidth Product fT = 10 GHz TYP. ·High Gain, Low Noise Figure ︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS ·Designed for VHF~UHF band low |
![]() Inchange Semiconductor |
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2SC5013-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation 0.3 +0.1 –0.05 P |
![]() NEC |
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2SC5063 | Silicon NPN Triple Diffusion Planar Type SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SC5063 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High-speed switching High collector to base voltage VCBO +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Wide area |
![]() Kexin |
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部品番号 | 部品説明 | メーカ | |
ALC887 | The ALC887 is a 7.1 Channel High Definition Audio Codec with two independent SPDIF outputs. Featuring eight channels of DAC support 7.1 sound playback, and integrates two stereo ADC that can support a stereo microphone, and feature Acoustic Echo Cancellation (AEC), Beam Forming (BF), and Noise Suppression (NS) for voice applications. |
![]() Realtek |
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BK3431 | The BK3431 chip is a highly integrated Bluetooth 4.0 low energy single mode device. It integrates a high-performance RF transceiver, baseband, ARM-core Micro processor, rich feature peripheral units, programmable protocol and profile
to support BLE application. The Flash program memory makes it suitable for customized applications.
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![]() Beken |
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C1318 | This is a 2SC1318, Vcbo=60V, Silicon NPN epitaxial planer type Transistor, TO-92 Package. |
![]() Panasonic |
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F1B2CCI | VRRM=200V, Stack Silicon Diffused Diode, TO-220IS Package. |
![]() KEC |
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20N60C2 | 650V, Cool MOS Power Transistor, SPP20N60C2, SPB20N60C2, SPA20N60C2. |
![]() Infineon |
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