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20N60C2 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 20N60C2

SPP20N60C2

Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge Datasheet.jp • Periodic Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO220-3-31 P-TO263-3-2 V Ω A 0.19 20 avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra l

Infineon Technologies
Infineon Technologies
20N60C2 データシート pdf



20N6 Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
20N60BD1

Hiperfast(tm) Igbt

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE =

IXYS Corporation
IXYS Corporation
20N60C2 データシート pdf
20N60C5

IXKH20N60C5

IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS = 600 V R =DS(on) max 0.2 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EA

IXYS
IXYS
20N60C2 データシート pdf
20N681K

(20NxxxK) Metal Oxide Varistor Curves

METAL OXIDE VARISTOR Transient V-I Characteristics Curves 20mm V-I CHARACTERISTIC CURVE (for standard MOVs) 3000 2000 Max Leakage Current Max Clamping Voltage 1000 900 800 700 600 500 Voltage (V) JVR-20N911K JVR-20N821K JVR-20N781K JVR-20N751K JVR-20N681K J

RFE
RFE
20N60C2 データシート pdf
20N681K

(20NxxxK) Metal Oxide Varistor

METAL OXIDE VARISTOR 20mm Disc Part Number Maximum Allowable Voltage ACrms DC (V) (V) 11 14 14 18 17 22 20 26 25 31 30 38 35 45 40 56 50 65 60 85 75 100 95 125 116 150 130 170 140 180 150 200 175 225 195 250 210 275 230 300 250 320 275 350 300 385 320 418 350

RFE
RFE
20N60C2 データシート pdf
20N65

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N65 Preliminary Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 TO-247 The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This

UTC
UTC
20N60C2 データシート pdf
20N60S1

FMP20N60S1

FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1 6.4 ±0.2 15 ± 0.2 Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) O

Fuji Electric
Fuji Electric
20N60C2 データシート pdf
20N60B

Hiperfast(tm) Igbt

HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weigh

IXYS Corporation
IXYS Corporation
20N60C2 データシート pdf


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