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STW88N65M5-4 の電気的特性と機能

STW88N65M5-4のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STW88N65M5-4
部品説明 N-CHANNEL MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STW88N65M5-4 Datasheet, STW88N65M5-4 PDF,ピン配置, 機能
STW88N65M5-4
N-channel 650 V, 0.024 typ., 84 A, MDmesh™ M5
Power MOSFET in a TO247-4 package
Datasheet — production data
TO247-4
2 34
1
Features
Order code
STW88N65M5-4
VDS
@Tjmax.
710 V
RDS(on) max.
0.029 Ω
ID
84 A
Higher VDS rating
Higher dv/dt capability
Excellent switching performance thanks to the
extra driving source pin
Easy to drive
100% avalanche tested
Figure 1. Internal schematic diagram
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Applications
High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Description
This device is an N-channel Power MOSFET
based on MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STW88N65M5-4
Table 1. Device summary
Marking
Package
88N65M5
TO247-4
October 2015
This is information on a product in full production.
Doc ID 027754 Rev 1
Packing
Tube
1/13
www.st.com

1 Page





STW88N65M5-4 pdf, ピン配列
STW88N65M5-4
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VGS Gate- source voltage
ID
IDM (1)
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
IAR
Max. current during repetitive or single pulse
avalanche (pulse width limited by Tjmax)
EAS
dv/dt (2)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 84 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V.
±25
84
50.5
336
450
15
2000
15
- 55 to 150
150
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max.
Rthj-amb Thermal resistance junction-ambient max.
Value
0.28
50
Unit
V
A
A
W
A
mJ
V/ns
°C
Unit
°C/W
Doc ID 027754 Rev 1
3/13
13


3Pages


STW88N65M5-4 電子部品, 半導体
Electrical characteristics
STW88N65M5-4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
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Figure 3. Thermal impedance
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Figure 4. Output characteristics
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Figure 6. Gate charge vs gate-source voltage
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Figure 5. Transfer characteristics
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Figure 7. Static drain-source on-resistance
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6/13 Doc ID 027754 Rev 1

6 Page



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部品番号部品説明メーカ
STW88N65M5-4

N-CHANNEL MOSFET

STMicroelectronics
STMicroelectronics


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