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What is STW56N65DM2?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-CHANNEL MOSFET".


STW56N65DM2 Datasheet PDF - STMicroelectronics

Part Number STW56N65DM2
Description N-CHANNEL MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STW56N65DM2
N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS
STW56N65DM2 650 V
RDS(on)
max.
0.065 Ω
ID PTOT
48 A 360 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW56N65DM2
Table 1: Device summary
Marking
56N65DM2
Package
TO-247
Packing
Tube
September 2015
DocID027142 Rev 2
This is information on a product in full production.
1/12
www.st.com

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STW56N65DM2 equivalent
STW56N65DM2
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 48 A
ISD = 48 A, di/dt = 100 A/µs,
VDD = 100 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 48 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Electrical characteristics
Min.
-
Typ. Max. Unit
48 A
- 192 A
- 1.6 V
- 135
ns
- 0.68
µC
- 10
A
- 260
- 2.75
ns
µC
- 21
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027142 Rev 2
5/12


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Featured Datasheets

Part NumberDescriptionMFRS
STW56N65DM2The function is N-CHANNEL MOSFET. STMicroelectronicsSTMicroelectronics

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