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PDF STL18N60M2 Data sheet ( Hoja de datos )
| Número de pieza | STL18N60M2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL18N60M2
N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg
Power MOSFET in a PowerFLAT™ 5x6 HV package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 5x6 HV
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM01476v1
Order code
STL18N60M2
VDS @
TJmax
650 V
RDS(on) max
0.308 Ω
ID
9A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STL18N60M2
Table 1. Device summary
Marking
Package
18N60M2
PowerFLAT™ 5x6 HV
Packaging
Tape and reel
June 2014
This is information on a product in full production.
DocID026517 Rev 1
1/16
www.st.com
1 page  
STL18N60M2
Electrical characteristics
Symbol
Table 6. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-on delay time
Fall time
VDD = 300 V, ID = 6.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min. Typ. Max Unit
- 12 - ns
- 9 - ns
- 47 - ns
- 10.6 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
VGS = 0, ISD = 13 A
-
-
-
9A
36 A
1.6 V
trr Reverse recovery time
- 305
ISD = 13 A, di/dt = 100 A/μs
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V
(see Figure 16)
- 3.3
- 22
ns
μC
A
trr Reverse recovery time
VDD = 60 V
- 417
Qrr Reverse recovery charge di/dt = 100 A/μs, ISD = 13 A - 4.6
IRRM Reverse recovery current
Tj=150 °C (see Figure 16)
- 22.2
ns
μC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID026517 Rev 1
5/16
16
5 Page 
STL18N60M2
Package mechanical data
Figure 21. PowerFLAT™ 5x6 HV recommended footprint (dimensions are in mm)
8368143_Rev_B_footprint
DocID026517 Rev 1
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| PDF Descargar | [ Datasheet STL18N60M2.PDF ] | |
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