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PDF HAF2027S Data sheet ( Hoja de datos )
| Número de pieza | HAF2027S | |
| Descripción | Silicon N-Channel Power MOSFET Power Switching | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAF2027S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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HAF2027(L), HAF2027(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G1674-0100
Rev.1.00
May 19, 2008
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 V Gate drive)
• Built-in the over temperature shut-down circuit
• High endurance capability against to the shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
www.DataSheet4U.com
123
HAF2027(L)
123
HAF2027(S)
D
1. Gate
2. Drain
(Flange)
3. Source
G Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
S
REJ03G1674-0100 Rev.1.00 May 19, 2008
Page 1 of 8
1 page  
HAF2027(L), HAF2027(S)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
25 A
15
ID = 10 A
10 VGS = 4 V
25 A
ID = 10 A
5
-50 -25
VGS = 10 V
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
100
10
1 10 100
Case Temperature IDR (A)
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50
Reverse Drain Current vs.
Source to Drain Voltage
5 V VGS = 0 V
40
30
10 V
20
10
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance vs.
Drain Current
1000
VDS = 10 V
100 Pulse Test
Tc = -25°C
10 25°C
1 75°C
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01 0.1
1
10
Drain Current ID (A)
100
Switching Characteristics
100
tr
tf
td(off)
10
td(on)
VGS = 10 V, VDD = 30 V
PW = 300 µs, duty ≤ 1 %
1
0.1 1
10
Drain Current ID (A)
100
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
VGS = 0
f = 1 MHz
100
0 10 20 30 40 50 60
Drain to Source Voltage VDS (V)
REJ03G1674-0100 Rev.1.00 May 19, 2008
Page 5 of 8
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HAF2027S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HAF2027 | Silicon N-Channel Power MOSFET Power Switching |  Renesas Technology |
| HAF2027L | Silicon N-Channel Power MOSFET Power Switching | Renesas |
| HAF2027S | Silicon N-Channel Power MOSFET Power Switching | Renesas |
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