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CR0300SB の電気的特性と機能

CR0300SBのメーカーはLittelfuseです、この部品の機能は「The CR range of protectors are based on the proven technology of the T10 thyristor product」です。


製品の詳細 ( Datasheet PDF )

部品番号 CR0300SB
部品説明 The CR range of protectors are based on the proven technology of the T10 thyristor product
メーカ Littelfuse
ロゴ Littelfuse ロゴ 




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CR0300SB Datasheet, CR0300SB PDF,ピン配置, 機能
CRxxxx series
Description
The CR range of protectors are based on the proven
technology of the T10 thyristor product. Designed for
transient voltage protection of telecommunications
equipment, it provides higher power handling than a
conventional avalanche diode (TVS) and when compared to
a GDT offers lower voltage clamping levels and infinite surge
life.
Packaged in a transfer molded DO-214AA surface mount
outline designed for high speed pick & place machines used
in today’s surface mount assembly lines.
Electrical Charecteristics
The electrical characteristics of a CRXXXX device is similar
to that of a self gated Triac, but the CR is a two terminal
device with no gate. The gate function is achieved by an
internal current controlled mechanism.
Like the T.T.S. diodes, the CRXXXX has a standoff voltage
(Vrm) which should be equal to or greater than the operating
voltage of the system to be protected. At this voltage (Vrm)
the current consumption of the CRXXXX is negligible and will
not effect the protected system.
When a transient occurs, the voltage across the CRXXXX
will increase until the breakdown voltage (Vbr) is reached. At
this point the device will operate in a similar way to a T.V.S.
device and is in an avalanche mode.
The voltage of the transient will now be limited and will only
increase by a few volts as the device diverts more current.
As this transient current rises, a level of current through the
device is reached (Ibo) which causes the device to switch to
a fully conductive state such that the voltage across the
device is now only a few volts (Vt). The voltage at which the
device switches from the avalanche mode to the fully
conductive state (Vt) is known as the Breakover Voltage
(Vbo). When the device is in the Vt state, high currents can
be deverted without damage to the CRXXXX due to the low
voltage across the device, since the limiting factor in such
devices is dissipated power (V x I).
Resetting of the device to the non conducting state is
controlled by the current flowing through the device. When
the current falls below a certain value, known as the Holding
Current (Ih), the device resets automatically.
As with the avalanche T.V.S. device, if the CRXXXX is
subjected to a surge current which is beyond its maximum
rating, then the device will fail in short circuit mode, this
ensures that the equipment is ultimately protected.
Selecting A CRXXXX
1. When selecting a CRXXXX device, it is important that the
Vrm of the device is equal to or greater than the operating
voltage of the system.
2. The minimum Holding Current (Ih) must be greater than
the current the system is capable of delivering otherwise the
device will remain conducting following a transient condition.
IT
IH
VT
IRM
IBO
VBR
VRM VBO
MIN
V-I Graph
Illustrating Symbols
and Terms for
the CR Surge
Protection Device.
The CRXXXX Range Can Be Used to Protect Against Surges As Defined In The Following International Standards.
SA SB SC
FCC Rules Part 68/D
Metallic
Longitudinal
10/560µs
10/160µs
50A
100A
100A
150A
100A
200A
Bellcore Specification
TR-NWT-001089
10/1000µs
2/10µs
100v/µs
37A
-
1KV
75A 100A
- 500A
1KV 1KV
ITU K-17 (Formerly CCITT)
Voltage Wave Form
Current Wave Form
100/700µs
5/310µs
-
-
1.5KV
38A
1.5KV
38A
VDE 0433
Voltage Wave Form
Current Wave Form
10/700µs
5/310µs
-
-
2KV 4.0KV
50A 100A
C-NET 131-24
Voltage Wave From
Current Wave Form
0.5/700µs
0.8/310µs
1.0KV
25A
1.0KV
25A
4.0KV
100A
IEC 1000-4-5
(Discharge through 2impendance) I
Voltage Wave Form
8/20µs
1-2/50µs
-
-
100A
300V
250A
500V
ITU K-20
(Formerly CCITT)
Voltage Wave Form
Current Wave Form
10/700µs
5/310µs
1000V
25A
10000V
25A
4000V
100A
52 w w w . l i t t e l f u s e . c o m

1 Page





CR0300SB pdf, ピン配列
CRxxxx series
°
CRXXXXSB
CRXXXXSC
CRXXXXSA
°
PULSE WAVE FORM (10/10000µS)
tr
100
90
t2
50
tr = 1.25 x (t2 - t1) =10µs
td = 1000µs
10 t1
12 3
° t - Time - m S e c
PEAK SURGE ON-STATE CURRENT
VS. SURGE CURRENT DURATION
100
80
60
50
40
30
CRXXXXSB
20 CRXXXXSC
10
8
6
5
CRXXXXSA
4
3
2
1
1
2 345
10 20 30 40 50 100 200 300
1000
Surge Current Duration - full cycles @ 60HZ SINUSOIDAL
4
10x160µs PULSE WAVE FORM
Peak Value - Ipp
TEST WAVEFORM
PARAMETER
tr = 10 sec
td = 160 sec
Half
Value
=
Ipp
2
=
td
10x160 Waveform
10x560µs PULSE WAVE FORM
Peak Value - Ipp
TEST WAVEFORM
PARAMETER
tr = 10 sec
td = 560 sec
Half
Value
=
Ipp
2
=
td
10x560 Waveform
0 80 160 240 320 400 480
t - Time - Sec
0 280 560 840 1,120 1,400 1,680
t - Time - Sec
54 w w w . l i t t e l f u s e . c o m


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共有リンク

Link :


部品番号部品説明メーカ
CR0300SA

The CR range of protectors are based on the proven technology of the T10 thyristor product

Littelfuse
Littelfuse
CR0300SB

The CR range of protectors are based on the proven technology of the T10 thyristor product

Littelfuse
Littelfuse
CR0300SC

The CR range of protectors are based on the proven technology of the T10 thyristor product

Littelfuse
Littelfuse


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