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CR02AM-8 の電気的特性と機能

CR02AM-8のメーカーはMitsubishi Electric Semiconductorです、この部品の機能は「LOW POWER USE GLASS PASSIVATION TYPE」です。


製品の詳細 ( Datasheet PDF )

部品番号 CR02AM-8
部品説明 LOW POWER USE GLASS PASSIVATION TYPE
メーカ Mitsubishi Electric Semiconductor
ロゴ Mitsubishi Electric Semiconductor ロゴ 




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CR02AM-8 Datasheet, CR02AM-8 PDF,ピン配置, 機能
CR02AM-8A
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.3A
• VDRM ....................................................................... 400V
• IGT ......................................................................... 100µA
APPLICATION
Strobe flasher
132
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
V1
V1
Voltage class
8
400
500
320
400
320
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. With gate to cathode resistance RGK=1k.
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=30°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
V
V
V
Ratings
0.47
0.3
10
0.4
0.1
0.01
6
6
0.1
–40 ~ +125
–40 ~ +125
0.23
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Feb.1999

1 Page





CR02AM-8 pdf, ピン配列
GATE CHARACTERISTICS
102
7
5
3
2
101
VFGM = 6V
PGM = 0.1W
7
5
3 PG(AV) = 0.01W
2
100
VGT = 0.8V
7
5
IGT = 100µA
3 (Tj = 25°C)
2
10–1
7
5
VGD = 0.2V
IFGM = 0.1A
3
2
10–2
10–22 3 5 710–12 3 5 71002 3 5 71012 3 5 7102
GATE CURRENT (mA)
GATE CURRENT VS.
JUNCTION TEMPERATURE
200
TYPICAL EXAMPLE
180 IGT (25°C)
160
#1
140 # 2
# 1 32µA
# 2 9µA
120
100
80
60
40 See V3
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
180
160
140
120
100
80
60
40
20
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
00000000........25987634,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,DI,,,,,,,,,STR,,,,,,,,,IB,,,,,,,,,TEUYXTP,,,,,,,,,AIOIMCNPALLE
0.1
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
120° 180°
90°
60°
θ = 30°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
0.1 0.2 0.3 0.4
AVERAGE ON-STATE CURRENT (A)
Feb.1999


3Pages





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[ CR02AM-8 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
CR02AM-8

LOW POWER USE GLASS PASSIVATION TYPE

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
CR02AM-8

LOW POWER USE GLASS PASSIVATION TYPE

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
CR02AM-8A

LOW POWER USE GLASS PASSIVATION TYPE

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor


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