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S1J の電気的特性と機能

S1JのメーカーはTaiwan Semiconductorです、この部品の機能は「1.0AMP Surface Mount Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 S1J
部品説明 1.0AMP Surface Mount Rectifiers
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 




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S1J Datasheet, S1J PDF,ピン配置, 機能
Pb
RoHS
COMPLIANCE
CREAT BY ART
S1A - S1M
1.0AMP Surface Mount Rectifiers
SMA/DO-214AC
Features
— For surface mounted application
— Glass passivated chip junction
— Low forward voltage drop
— High current capability
— Easy pick and place
— High surge current capability
— Plastic material used carries Underwriters
Laboratory Classification 94V-0
— High temperature soldering:
260/10 seconds at terminals
— Qualified as per AEC-Q101
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: Molded plastic
— Terminal: Pure tin plated, lead free
solderable per J-STD-002B and
JESD22-B102D
— Polarity: Indicated by cathode band
— Packing: 12mm tape per EIA STD RS-481
— Weight: 0.064 grams
Dimensions in inches and (millimeters)
Marking Diagram
S1X = Specific Device Code
G = Green Compound
Y = Year
M = Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol S1A S1B S1D S1G S1J S1K S1M Unit
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VRRM 50 100 200 400 600 800 1000
VRMS 35 70 140 280 420 560 700
VDC 50 100 200 400 600 800 1000
IF(AV)
1
V
V
V
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
40
30 A
Maximum Instantaneous Forward Voltage (Note 1)
@1A
VF
1.1
V
Maximum Reverse Current @ Rated VR TA=25
T A=125
IR
Maximum Reverse Recovery Time (Note 2)
Trr
Typical Junction Capacitance (Note 3)
Cj
Non-Repetitive Peak Reverse Avalanche
Engergy at 25, IAS=1A, L=10mH
ERSM
Typical Thermal Resistance
RθjA
RθjL
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
TJ
TSTG
Note 2: Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1
50
1.5
12
5
75
27
- 55 to + 175
- 55 to + 175
uA
uS
pF
mJ
85
30
OC/W
OC
OC
Version:I11

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