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S1J の電気的特性と機能

S1JのメーカーはVishayです、この部品の機能は「Surface Mount Glass Passivated Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 S1J
部品説明 Surface Mount Glass Passivated Rectifier
メーカ Vishay
ロゴ Vishay ロゴ 




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S1J Datasheet, S1J PDF,ピン配置, 機能
www.vishay.com
S1A thru S1M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
EAS
IR
VF
TJ max.
1.0 A
50 V to 1000 V
40 A, 30 A
5 mJ
1.0 μA, 5.0 μA
1.1 V
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT
Device marking code
SA SB SD SG SJ SK SM
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0 A
40 30 A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
Operating junction and storage temperature range
EAS
TJ, TSTG
5
- 55 to + 150
mJ
°C
Revision: 11-Dec-12
1 Document Number: 88711
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





S1J pdf, ピン配列
www.vishay.com
S1A thru S1M
Vishay General Semiconductor
100
TJ = 25 °C
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1 10
0.1 Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.8 1.2 1.6
Instantaneous Forward Voltage (V)
2.0
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.01
0.1 1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
10 1000
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
0.001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
S1K, S1M
100
10
1
0.01
S1A thru S1J
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 11-Dec-12
3 Document Number: 88711
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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