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PE42522 の電気的特性と機能

PE42522のメーカーはPeregrine Semiconductorです、この部品の機能は「RF Digital Attenuator」です。


製品の詳細 ( Datasheet PDF )

部品番号 PE42522
部品説明 RF Digital Attenuator
メーカ Peregrine Semiconductor
ロゴ Peregrine Semiconductor ロゴ 




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PE42522 Datasheet, PE42522 PDF,ピン配置, 機能
PE42522
Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–26.5 GHz
Features
• Broad frequency support from 9 kHz to 26.5 GHz
• High port to port isolation
63 dB @ 3 GHz
58 dB @ 7.5 GHz
39 dB @ 13.5 GHz
28 dB @ 20 GHz
22 dB @ 26.5 GHz
• HaRP™ technology enhanced
Fast settling time
No gate and phase lag
No drift in insertion loss and phase
• Improved high frequency insertion loss and return
loss performance with external matching
• High ESD performance of 3.5 kV HBM on all pins
• Packaging – 29-lead 4 × 4 mm LGA
Applications
• Test and measurement
• Microwave backhaul
• Radar
Figure 1 • PE42522 Functional Diagram
RFC
RF1
50Ω 50Ω
CMOS Control Driver
V1 VSS_EXT
RF2
Product Description
The PE42522 is a HaRP™ technology-enhanced absorptive SPDT RF switch that supports a broad frequency
range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation, high linearity
performance and has exceptional settling time making this device ideal for many broadband wireless applica-
tions. No blocking capacitors are required if DC voltage is not present on the RF ports.
The PE42522 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-12014-6 – (2/2015)

1 Page





PE42522 pdf, ピン配列
PE42522
UltraCMOS® SPDT RF Switch
Table 1 • Absolute Maximum Ratings for PE42522 (Cont.)
Parameter/Condition
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Pulsed, 5% duty cycle of 4620 μs period, 50Ω.
3) Human body model (MIL-STD 883 Method 3015).
4) Machine model (JEDEC JESD22-A115).
5) Charged device model (JEDEC JESD22-C101).
Min Max Unit
Recommended Operating Conditions
Table 2 list the recommending operating condition for PE42522. Devices should not be operated outside the
recommended operating conditions listed below.
Table 2 • Recommended Operating Condition for PE42522
Parameter
Normal mode (VSS_EXT = 0V)(1)
Supply voltage, VDD
Supply current, IDD
Bypass mode (VSS_EXT = –3.4V)(2)
Supply voltage, VDD
(VDD 3.4V for Table 3 full spec. compliance)
Supply current, IDD
Negative supply voltage, VSS_EXT
Negative supply current, ISS
Normal or Bypass mode
Digital input high, V1
Digital input low, V1
RF input power, CW (RFC–RFX)(3)
9 kHz–2.89 MHz
>2.89 MHz–18 GHz
>18–26.5 GHz
RF input power, pulsed (RFC–RFX)(4)
9 kHz–2.89 MHz
>2.89 MHz–18 GHz
>18–26.5 GHz
Min
2.3
2.7
–3.6
–40
1.17
–0.3
Typ Max Unit
5.5 V
120 200 μA
3.4 5.5 V
50 80 μA
–3.2 V
–16 μA
3.6 V
0.6 V
Fig. 2, Fig. 3
30
Fig. 4
dBm
dBm
dBm
Fig. 2, Fig. 3
32
Fig. 4
dBm
dBm
dBm
DOC-12014-6 – (2/2015)
www.psemi.com
Page 3


3Pages


PE42522 電子部品, 半導体
PE42522
UltraCMOS® SPDT RF Switch
Table 3 • PE42522 Electrical Specifications (Cont.)
Parameter
Path
Condition
Min Typ
Input 0.1dB compression
point(4)
RFC–RFX
Fig. 2
Fig. 3
Fig. 4
Input IP2
RFC–RFX
10–18000 MHz
121
Input IP3
RFC–RFX
10–18000 MHz
59
Settling time
50% CTRL to 0.05 dB final value
7
Switching time
50% CTRL to 90% or 10% of RF
3
Notes:
1) Normal mode: connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator.
2) Bypass mode: use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator.
3) High frequency performance can be improved by external matching (see Figure 19Figure 21).
4) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
Max
10
4.5
Unit
dBm
dBm
dBm
dBm
dBm
μs
μs
Switching Frequency
The PE42522 has a maximum 25 kHz switching rate
in normal mode (pin 29 tied to ground). A faster
switching rate is available in bypass mode (pin 29 tied
to VSS_EXT). The rate at which the PE42522 can be
switched is then limited to the switching time as
specified in Table 3.
Switching frequency describes the time duration
between switching events. Switching time is the time
duration between the point the control signal reached
50% of the final value and the point the output signal
reaches within 10% or 90% of its target value.
Spur-Free Performance
The typical spurious performance of the PE42522 in
normal mode is –125 dBm (pin 29 tied to ground). If
spur-free performance is desired, the internal
negative voltage generator can be disabled by
applying a negative voltage to VSS_EXT (pin 29).
Hot-Switching Capability
The maximum hot switching capability of the PE42522
is 20 dBm from 1.4 MHz to 18 GHz. The maximum hot
switching capability below 1.4 MHz and above 18 GHz
does not exceed the maximum RF CW terminated
power, see Figure 2Figure 4. Hot switching occurs
when RF power is applied while switching between
RF ports.
Control Logic
Table 4 provides the control logic truth table for
PE42522.
Table 4 • Truth Table for PE42522
State
RF1 ON
RF2 ON
V1
0
1
Page 6
www.psemi.com
DOC-12014-6 – (2/2015)

6 Page



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