DataSheet.jp

STN1A60 の電気的特性と機能

STN1A60のメーカーはWINSEMIです、この部品の機能は「Bi-Directional Triode Thyristor」です。


製品の詳細 ( Datasheet PDF )

部品番号 STN1A60
部品説明 Bi-Directional Triode Thyristor
メーカ WINSEMI
ロゴ WINSEMI ロゴ 




このページの下部にプレビューとSTN1A60ダウンロード(pdfファイル)リンクがあります。
Total 5 pages

No Preview Available !

STN1A60 Datasheet, STN1A60 PDF,ピン配置, 機能
Features
Repetitive Peak off-State Voltage: 600V
R.M.S On-State Current(IT(RMS)=1A
Low on-state voltage: VTM=1.2(typ.)@ ITM
Low reverse and forward blocking current:
IDRM=500uA@TC=125
Low holding current: IH=4mA (typ.)
High Commutation dV/dt.
STN1A60
Logic Level
Bi-Directional Triode Thyristor
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25unless otherwise specified)
Symbol
Parameter
Value Units
VDRM
T(RMS)
ITSM
I2t
Peak Repetitive Forward Blocking Voltage(gate open)
(Note 1)
Forward Current RMS (All Conduction Angles, TL=50)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
600
1
9.1/10
0.41
V
A
A
A2s
PGM
PG(AV)
dI/dt
IFGM
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
ITM = 1.5A; IG = 200mA; dIG/dt = 200mA/µs
TJ=125
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
5W
0.1 W
50 A/μs
0.5 A
VRGM
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
6V
TJ, Junction Temperature
-40~125
Tstg Storage Temperature
-40~150
mass
2g
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 60
- - 120
Units
/W
/W
Rev. B Nov.2008
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
T01-3

1 Page





STN1A60 pdf, ピン配列
Fig.1
Fig.3
STN1A60
Figg.22
Fig.4
Fig.5
Fig.6
Steady, keep you advance
3/5


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ STN1A60 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
STN1A60

(STN1A60 / STN1A80) Bi-Directional Triode Thyristor

SemiWell Semiconductor
SemiWell Semiconductor
STN1A60

Bi-Directional Triode Thyristor

WINSEMI
WINSEMI
STN1A60

Silicon Bidirectional Triode Thyristors

TGS
TGS


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap