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Datasheet S-LP2301ALT1G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S-LP2301ALT1G | P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦110mΩ@VGS=-4.5V
● RDS(ON) ≦150mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON) ● S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requ |  LRC | mosfet |
S-L Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S-L1SS400CST5G | Switching diode LESHAN RADIO COMPANY, LTD.
Switching diode
• Applications High speed switching
• Features 1) Extremely small surface mounting type. 2) High Speed. 3) High reliability.
• Construction Silicon epitaxial planar
L1SS400CST5G S-L1SS400CST5G
1
2
SOD - 923
• We declare that the material of produ  Leshan Radio Company diode | | |
| 2 | S-L2980 | High Ripple Rejection Low Dropout CMOS Voltage Regulator DataSheet4U.com
DataSheet 4 U .com DataSheet4U.com
High Ripple Rejection Low Dropout CMOS Voltage Regulator S-L2980 Series
DataSheet4U.com
2001 IC Marketing Group Seiko Instruments Inc.
Seiko Instruments Inc. / Components Headquarters
DataShee
et4U.com
DataSheet4U.com
Data  Seiko Instruments regulator | | |
| 3 | S-L2985 | High Ripple Rejection WLP Package Low Dropout CMOS Voltage Regulator
Rev.2.0_00
HIGH RIPPLE-REJECTION WLP PACKAGE LOW DROPOUT CMOS VOLTAGE REGULATOR
S-L2985 Series
The S-L2985 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology. A built- Seiko Instruments regulator | | |
| 4 | S-L2N7002LT1G | Small Signal MOSFET LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
• • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating Drain–Source V Leshan Radio Company mosfet | | |
| 5 | S-L2SA1365ELT1G | General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw Leshan Radio Company transistor | | |
| 6 | S-L2SA1365ELT3G | General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw Leshan Radio Company transistor | | |
| 7 | S-L2SA1365FLT1G | General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw Leshan Radio Company transistor | |
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