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LNTS4409NWT1G の電気的特性と機能

LNTS4409NWT1GのメーカーはLRCです、この部品の機能は「Small Signal MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 LNTS4409NWT1G
部品説明 Small Signal MOSFET
メーカ LRC
ロゴ LRC ロゴ 




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LNTS4409NWT1G Datasheet, LNTS4409NWT1G PDF,ピン配置, 機能
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323
Features
Advance Planar Technology for Fast Switching, Low RDS(on)
Higher Efficiency Extending Battery Life
This is a Pb−Free Device
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
Boost and Buck Converter
Load Switch
Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
t < 5 s TA = 25°C
Steady TA = 25°C
State TA = 75°C
Steady State
Power Dissipation (Note 1)
tv5s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
VDSS
VGS
ID
ID
PD
PD
IDM
TJ,
TSTG
IS
TL
25
"8.0
0.75
0.7
0.6
0.28
0.33
3.0
−55 to
+150
0.3
260
V
V
A
A
W
W
A
°C
A
°C
ESD Rating − Machine Model
250 V
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
450 °C/W
Junction−to−Ambient − t v 5 s (Note 1)
RqJA
375
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
LNTS4409NWT1G
S-LNTS4409NWT1G
3
1
2
SC-70
V(BR)DSS
25 V
RDS(on) Typ
249 mW @ 4.5 V
299 mW @ 2.7 V
ID Max
0.75 A
PIN CONNECTIONS
SC-70 (3-Leads)
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
3
T4
12
T4 = Specific Device Code
M = Month Code
Device
Package
Shipping
LNTS4409NWT1G SC−70
3000/Tape & Reel
S-LNTS4409NWT1G (Pb−Free)
Rev .A 1/5

1 Page





LNTS4409NWT1G pdf, ピン配列
3.2
8V
4.5 V
2.4
1.6
LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G , S-LNTS4409NWT1G
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
3.2
VDS 10 V
3V
2.5 V
VGS = 2 V
2.4
1.6
0.8
VGS = 1.5 V
0
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.8
0
0
25°C
TJ = 125°C
TJ = −55°C
0.8 1.6 2.4 3.2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
Figure 2. Transfer Characteristics
0.8
VGS = 4.5 V
0.8
VGS = 2.5 V
0.6
TJ = 125°C
0.4
TJ = 25°C
0.2
TJ = −55°C
0
0 0.8 1.6 2.4 3.2
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.6 TJ = 125°C
0.4 TJ = 25°C
0.2 TJ = −55°C
0
0 0.8 1.6 2.4 3.2
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
ID = 0.75 A
1.8
1.6
1.4
1.2
1
0.8
VGS = 2.5 V
VGS = 4.5 V
100
80
60
40
20
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
0
0
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
5 10 15 20
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
25
Rev .A 3/5


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部品番号部品説明メーカ
LNTS4409NWT1G

Small Signal MOSFET

LRC
LRC


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