S-LN4812LT1G Datasheet PDF - LRC
| Part Number | S-LN4812LT1G | |
| Description | N-Channel Enhancement-Mode MOSFET | |
| Manufacturers | LRC | |
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There is a preview and S-LN4812LT1G download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@6 A = 38mΩ
RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current Handling Capability
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LN4812LT1G
S-LN4812LT1G
LN4812LT3G
S-LN4812LT3G
Marking
N48
N48
Shipping
3000/Tape&Reel
10000/Tape&Reel
LN4812LT1G
S-LN4812LT1G
3
1
2
SOT– 23 (TO–236AB)
N - Channel
3
1
2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1)
PD Maximum Power Dissipation
TA = 25oC
TA = 75oC
30
± 20
6
30
1.4
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
RθJC Junction-to-Case Thermal Resistance
RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
-55 to 150
50
90
Unit
V
A
W
oC
oC/W
Rev .O 1/4
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for S-LN4812LT1G electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ S-LN4812LT1G.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| S-LN4812LT1G | The function is N-Channel Enhancement-Mode MOSFET. LRC | |
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