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AWB7123 の電気的特性と機能

AWB7123のメーカーはANADIGICSです、この部品の機能は「Small-Cell Power Amplifier Module」です。


製品の詳細 ( Datasheet PDF )

部品番号 AWB7123
部品説明 Small-Cell Power Amplifier Module
メーカ ANADIGICS
ロゴ ANADIGICS ロゴ 




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AWB7123 Datasheet, AWB7123 PDF,ピン配置, 機能
FEATURES
InGaP HBT Technology
-50 dBc ACPR @ + 5 MHz, +24.5 dBm
• 30 dB Gain
High Efficiency
• Low Transistor Junction Temperature
Internally Matched for a 50 System
Low Profile Miniature Surface Mount Package;
Halogen Free and RoHS Compliant
Multi-Carrier Capability
AWB7123
1.93 GHz through 1.99 GHz
Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
APPLICATIONS
WCDMA, HSDPA and LTE Air Interfaces
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
Data Cards and Terminals
M41 Package
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7123 is a highly linear, fully matched, power
amplifier module designed for picocell, femtocell, and
customer premises equipment (CPE) applications.
Its high power efficiency and low adjacent channel
power levels meet the extremely demanding needs of
small cell infrastructure architectures. Designed for
WCDMA, HSDPA, and LTE air interfaces operating
in the 1.93 GHz to 1.99 GHz band, the AWB7123
delivers up to +24.5 dBm of WCDMA (64 DPCH)
power with an ACPR of -50 dBc. It operates from
a convenient +4.2 V supply and provides 30 dB of
gain. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
M a tch in g
Ne two r k
Bia s
Co n tr o l
M a tch in g
Ne two r k
Po we r
De te cto r
Figure 1: Block Diagram
06/2012

1 Page





AWB7123 pdf, ピン配列
AWB7123
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC)
0 +5 V
Reference Voltage (VREF)
0 +3.5 V
ESD Rating
Human Body Model (1)
Charged Device Model
(2)
Class 1C
Class IV
-
-
MSL Rating (3)
RF Output Power (POUT)
4- -
- +28 dBm
Storage Temperature (TSTG)
-40 +150
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Notes:
(1) JEDEC JS-001-2010
(2) JEDEC JESD22-C101D
(3) 260 °C peak reflow
PARAMETER
Table 3: Operating Ranges
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
1930
- 1990 MHz
Supply Voltage (VCC)
+3.2 +4.2 +4.5
V
Reference Voltage (VREF)
+2.80 +2.85 +2.90
0 - +0.5
V
PA "on"
PA "shut down"
RF Output Power (POUT)
-
+24.5
-
dBm
Case Temperature (TC)
-40 - +85 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
3
PRELIMINARY DATA SHEET - Rev 1.3
06/2012


3Pages


AWB7123 電子部品, 半導体
AWB7123
1
2
3
Figure 4: PCB Footprint
6
PRELIMINARY DATA SHEET - Rev 1.3
06/2012

6 Page



ページ 合計 : 9 ページ
 
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[ AWB7123 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
AWB7122

Small-Cell Power Amplifier Module

ANADIGICS
ANADIGICS
AWB7123

Small-Cell Power Amplifier Module

ANADIGICS
ANADIGICS
AWB7124

Small-Cell Power Amplifier Module

ANADIGICS
ANADIGICS
AWB7125

Small-Cell Power Amplifier Module

ANADIGICS
ANADIGICS


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