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BZX79C30 の電気的特性と機能

BZX79C30のメーカーはTaiwan Semiconductorです、この部品の機能は「Zener Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 BZX79C30
部品説明 Zener Diode
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 




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BZX79C30 Datasheet, BZX79C30 PDF,ピン配置, 機能
Small Signal Product
BZX79C2V0 thru BZX79C75
Taiwan Semiconductor
5% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 2.0V to 75V
- VZ Tolerance selection of ±5%
- Designed for through-hole device type mounting
- Hermetically sealed glasss
- Pb free and RoHS compliant
- High reliability glass passivation insuring parameter
stability and protection against junction contamination
MECHANICAL DATA
- Case: DO-35
- High temperature soldering guaranteed: 260oC/10s
- Polarity: Cathode indicated by polarity band
- Weight : 109 ±4 mg (approximately)
DO-35
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBO
VALUE
Power Dissipation
Forward Voltage
IF = 100 mA
PD
VF
500
1.5
Thermal Resistance (Junction to Ambient) (Note 1)
RθJA
300
Junction and Storage Temperature Range
TJ, TSTG
- 65 to +175
Note 1: Valid provided that electrodes are kept at ambient temerature .
UNIT
mW
V
oC/W
oC
Zener I vs. V Characteristics
VBR : Voltage at IZK
IZK : Test current for voltage VBR
ZZK : Dynamic impedance at IZK
IZT : Test current for voltage VZ
VZ : Voltage at current IZT
ZZT : Dynamic impedance at IZT
IZM : Maximum steady state current
VZM : Voltage at IZM
Document Number: DS_S1408013
Version: E14

1 Page





BZX79C30 pdf, ピン配列
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
Fig. 1 Power Dissipation VS. Ambient Temperature
600
500
400
300
200
100
0
0
40 80 120 160
Valid provided lTeeamdspaetraatudriest(aonCc)e of 0.8mm
from case are kept at ambient temperature
200
1000
100
10
Fig. 3 Differential Impedance VS. Zener Voltage
IZ=1mA
IZ=2mA
IZ=5mA
1
0
1
IZ=10mA
10
VZ - Reverse Voltage (V)
100
BZX79C2V0 thru BZX79C75
Taiwan Semiconductor
1000
100
10
Fig. 2 Total Capacitance
VR=0V
VR=2V
VR=5V
f=1MHz
TA=25oC
1
0
VR=20V
VR=30V
20 40 60
VZ - Reverse Voltage (V)
80
1000
100
Fig. 4 Forward Current VS. Forward Voltage
TA=25oC
10
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF - Forward Voltage (mV)
300
250
200
150
100
50
0
0
Fig. 5 Reverse Current VS. Reverse Voltage
PD=500mW
TA=25oC
2468
VZ - Reverse Voltage (V)
10
Fig. 6 Reverse Current VS. Reverse Voltage
100
PD=500mW
TA=25oC
10
1
0.1
0.01
15 25 35 45 55 65 75 85
VZ - Reverse Voltage (V)
Document Number: DS_S1408013
Version: E14


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共有リンク

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