|
|
PDF RJP60V0DPM-80 Data sheet ( Hoja de datos )
| Número de pieza | RJP60V0DPM-80 | |
| Descripción | IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RJP60V0DPM-80 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
RJP60V0DPM-80
600V - 22A - IGBT
Application: Inverter
Features
• High breakdown-voltage
• Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
• Short circuit withstand time (6 μs typ.)
• Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZD-A
(Package name: TO-3PF)
1
2
3
G
Preliminary Datasheet
R07DS1036EJ0200
Rev.2.00
Apr 02, 2014
C
1. Gate
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
VCES / VR
VGES
IC
IC
IC(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
45
22
90
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS1036EJ0200 Rev.2.00
Apr 02, 2014
Page 1 of 7
1 page  
RJP60V0DPM-80
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25 °C
tf
100
td(off)
td(on)
10
tr
1
1 10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25 °C
100
10
1
tf
td(off)
td(on)
tr
10 100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 22 A, Rg = 5 Ω
tf
100 td(off)
td(on)
tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25 °C
1000
Eon
Eoff
100
10
1 10 100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25 °C
1000
Eon
Eoff
100
1
10 100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10000
VCC = 300 V, VGE = 15 V
IC = 22 A, Rg = 5 Ω
1000
Eon
Eoff
100
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS1036EJ0200 Rev.2.00
Apr 02, 2014
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RJP60V0DPM-80.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RJP60V0DPM-80 | IGBT | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |