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2SD1816 PDF Data sheet ( 特性 )

部品番号 2SD1816
部品説明 NPN Epitaxial Planar Silicon Transistor
メーカ SeCoS
ロゴ SeCoS ロゴ 



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2SD1816 Datasheet, 2SD1816 PDF,ピン配置, 機能
Elektronische Bauelemente
2SD1816
4A , 120V
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Collector-to-Emitter Saturation Voltage
Excllent Linearity of hFE
High fT
Fast Switching Time
TO-251
A
BC
D
MARKING CODE
1816
= Date Code
Collector
2
1
Base
GE
K
F
H
MJ
P
3
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.35 6.80
4.90 5.50
2.15 2.40
0.43 0.90
6.50 7.50
7.20 9.65
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 6.25
0.85 1.50
2.30
0.60 1.05
0.50 0.90
0.43 0.62
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
VCBO
VCEO
120
100
V
V
Emitter to Base Voltage
VEBO
6
V
Collector Current (DC)
Collector Current (Pulse)1
IC 4
IC 8
A
A
Collector Power Dissipation PC 1
Junction Temperature
TJ 150
Storage Temperature
TSTG
-40 ~ 150
NOTE:
1. Duty=1/2, Pw=20ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
120
-
-
V IC=10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
100
-
-
V IC=1mA, IB=0, RB=
Emitter-base breakdown voltage
V(BR)EBO
6
-
-
V IE=10µA, IC=0
Collector cut-off current
ICBO - - 1 µA VCB=100V, IE=0
Emitter cut-off current
IEBO - - 1 µA VEB=4V, IC=0
DC current gain1
Collector-emitter saturation voltage1
Base -emitter saturation voltage1
hFE
VCE(sat)
VBE(sat)
140 - 280
40 -
-
-
0.15
0.4
- 0.9 1.2
VCE=5V, IC=500mA
VCE=5V, IC=3A
V IC=2A, IB=200mA
V IC=2A, IB=200mA
Transition frequency
fT - 180 - MHz VCE=10V, IC=500mA
Collector Output Capacitance
Turn-on time
Storage time
COB - 40 - pF VCB=10V, IE=0, f=1MHz
ton - 100 -
tS - 900 - nS See test circuit
Fall time
tf - 50
NOTE:
1. Measured under pulse condition. Pulse width300µs, Duty Cycle2%
-
http://www.SeCoSGmbH.com/
21-Jan-2015 Rev. A
Any changes of specification will not be informed individually.
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