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HER1607G の電気的特性と機能

HER1607GのメーカーはThinki Semiconductorです、この部品の機能は「16.0 Ampere Heatsink Dual Common Cathode High Efficiency Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 HER1607G
部品説明 16.0 Ampere Heatsink Dual Common Cathode High Efficiency Rectifier
メーカ Thinki Semiconductor
ロゴ Thinki Semiconductor ロゴ 




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HER1607G Datasheet, HER1607G PDF,ピン配置, 機能
HER1601G thru HER1608G
®
Pb Free Plating Product
HER1601G thru HER1608G
Pb
16.0 Ampere Heatsink Dual Common Cathode High Efficiency Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approxiamtely
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Suffix "G"
Case
Negative
Common Anode
Suffix "GA"
Case
Doubler
Tandem Polarity
Suffix "GD"
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Symbol
HER
1601G
HER
1602G
HER
1603G
HER
1604G
HER HER
1605G 1606G
HER
1607G
HER
1608G
VRRM 50 100 200 300 400 600 800 1000
VRMS
35
70 140 210 280 420 560 700
VDC 50 100 200 300 400 600 800 1000
Units
V
V
V
IF(AV)
16
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage (Note 1)
@8A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T A=25
@ T A=125
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
VF
IR
Trr
Cj
RθJC
TJ
TSTG
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
125
1.0
50
80
1.3
10
400
1.5
- 65 to + 150
- 65 to + 150
1.7
80
50
A
V
uA
nS
pF
/W
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/

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共有リンク

Link :


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