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PDF DSS8110Y Data sheet ( Hoja de datos )
| Número de pieza | DSS8110Y | |
| Descripción | NPN LOW SATURATION TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Features
BVCEO > 100V
IC = 1A high Continuous Collector Current
ICM = 3A Peak Pulse Current
RCE(sat) = 200mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage VCE(sat) < 200mV @ 1A
Complementary PNP Type Available (DSS9110Y)
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
DSS8110Y
100V NPN LOW SATURATION TRANSISTOR IN SOT363
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208 e3
Weight: 0.006 grams (approximate)
SOT-363
Top View
C
B
E
Device Symbol
CCE
CCB
Pin-Out Top
Ordering Information (Note 4)
Product
DSS8110Y-7
Marking
ZN5
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green”
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZN5
ZN5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
2012
Z
Mar
3
2013
A
Apr
4
2014
B
May
5
2015
C
Jun
6
2016
D
Jul
7
2017
E
Aug
8
2018
F
Sep
9
2019
G
Oct
O
2020
H
Nov
N
2021
I
Dec
D
DSS8110Y
Document number: DS31679 Rev. 3 - 2
1 of 7
www.diodes.com
July 2014
© Diodes Incorporated
1 page  
1.2
1.0
IB = 5mA
0.8
IB = 4mA
0.6 IB = 3mA
0.4 IB = 2mA
0.2 IB = 1mA
0
0 2 4 6 8 10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 10
DSS8110Y
500
400
300
200
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
100
TA = -55°C
0
0.001
0.01
0.1
1 10
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
1.2
VCE = 10V
1.0
0.1
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.01
0.0001 0.001 0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 10
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 125°C
0.2 TA = 150°C
0
0.0001 0.001 0.01
0.1
1 10
IC, COLLECTOR CURRENT (A)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.8
TA = -55°C
0.6
TA = 25°C
0.4
0.2 TA = 150°C
TA = 85°C
TA = 125°C
0
0.1 1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DSS8110Y
Document number: DS31679 Rev. 3 - 2
5 of 7
www.diodes.com
July 2014
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DSS8110Y.PDF ] | |
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