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PDF DSS4160DS Data sheet ( Hoja de datos )
| Número de pieza | DSS4160DS | |
| Descripción | DUAL NPN LOW SATURATION TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DSS4160DS
60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26
Features
BVCEO > 60V
IC = 1A high Continuous Collector Current
ICM = 2A Peak Pulse Current
RCE(sat) = 100mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage VCE(sat) < 250mV @ 1A
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.015 grams (approximate)
SOT26
Top View
C1 C2
B1 B2
E1 E2
Device Symbol
E1
B1
C2
Top View
Pin-Out
C1
B2
E2
Ordering Information (Note 4)
Product
DSS4160DS-7
Marking
ZN9
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green”
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
ZN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September
2013
A
Jan
1
2014
B
Feb Mar
23
2015
C
Apr
4
2016
D
May Jun
56
2017
E
Jul
7
2018
F
Aug Sep
89
2019
G
Oct
O
2020
H
Nov Dec
ND
DSS4160DS
Document number DS36556 Rev. 1 – 2
1 of 7
www.diodes.com
November 2013
© Diodes Incorporated
1 page  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1,000
1
800
TA = 150°C
VCE = 5V
IC/IB = 10
600
400
TA = 85°C
TA = 25°C
0.1
0.01
200
TA = -55°C
DSS4160DS
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
0
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1.2
VCE = 5V
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2
TA = 150°C
0
0.1 1
10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
180
150
f = 1MHz
0.001
0.1 1
10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 10
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2 TA = 150°C
0
0.1
1
10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
120
90
Cibo
60
30
0
0.1
Cobo
1 10 100
VR, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics
DSS4160DS
Document number DS36556 Rev. 1 – 2
5 of 7
www.diodes.com
November 2013
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DSS4160DS.PDF ] | |
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