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1N5711W PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1N5711W
部品説明 Surface Mount Schottky Barrier Diode
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 



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1N5711W Datasheet, 1N5711W PDF,ピン配置, 機能
1N5711W
Surface Mount Schottky Barrier Diode
Features
Low forward voltage drop
Guard Ring Construction for Transient
Protection
Fast switching time
Low Reverse Capacitance
Surface mount package ideally suited for
automatic insertion
Mechanical Data
Voltage Range
70 Volts
250m Watts Power Dissipation
SOD-123
0.053(1.35)
Max.
0.022(0.55)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
Case: SOD-123, Plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Date Code and Type Code
Type Code: SA
Weight: 0.01 grams (approx.)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.55(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
1N5711W
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Forward Current
VRRM
VRWM
VR
VR(RMS)
IFM
70
49
15
V
V
mA
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Pd
RθJA
TJ, TSTG
250
600
-65 to + 175
mW
K/W
OC
Type Number
Reverse Breakdown Voltage
Reverse Leakage Current
IR=10uA
VR=50V
Symbol
V(BR)
IR
Min
70
-
Typ Max Units
- -V
- 200 nA
Forward Voltage Drop
Junction Capacitance
IF=1.0mA
IF=15mA
VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
VF
70
-
- 0.41 V
- 1.0
Cj - - 2.0 pF
trr - - 1.0 nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
- 26 -

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