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PDF BAV199DW Data sheet ( Hoja de datos )
| Número de pieza | BAV199DW | |
| Descripción | Switching Diode Plastic-Encapsulate Diode | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
BAV199DW
Switching Diode Plastic-Encapsulate Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Surface Mount Package Ideally Suited For
Automatic Insertion.
Very Low Leakage Current.
MARKING：
K52
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
SOT-363
A
E
L
654
B
Top View
F1 2 3
DG
K
C
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Peak Repetitive Reverse Voltage
DC Reverse Voltage
Forward Continuous Current
T=1µs
VRRM
VR
IFM
85
85
160
4
Surge Current
T=10ms
T=1s
IFSM
1
0.5
Power Dissipation
Junction & Storage Temperature
PD
TJ, TSTG
200
150, -55~150
Unit
V
V
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Reverse Breakdown Voltage
V(BR)
85
-
-
Reverse Voltage Leakage Current
IR
-
-
5
- - 0.9
Collector-Emitter Saturation Voltage VF
-
-
-1
- 1.1
- - 1.25
Junction Capacitance
CJ -
2
-
Reverse Recovery Time
TRR - - 3
Unit Test Conditions
V IR=100µA
nA VR=75V
IF=1mA
IF=10mA
V
IF=50mA
IF=150mA
pF VR=0, f=1MHz
µs
IF=IR=10mA,
IRR=0.1 x IR, RL=100Ω
http://www.SeCoSGmbH.com/
26-Mar-2012 Rev. A
Any changes of specification will not be informed individually.
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