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1N5236B の電気的特性と機能

1N5236BのメーカーはTaiwan Semiconductorです、この部品の機能は「0.5W Hermetically Sealed Glass Zener Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5236B
部品説明 0.5W Hermetically Sealed Glass Zener Diodes
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 




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1N5236B Datasheet, 1N5236B PDF,ピン配置, 機能
Small Signal Product
1N5221B - 1N5263B
Taiwan Semiconductor
0.5W Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range 2.4 to 56 volts
- DO-35 package
- Through-hole device type mounting
- Hemetically sealed glass
- Compression bonded construction
- All extermal surfaces are corrosion
resistant and leads are readily solderable
- ROHS complaint
- Solder hot dip Tin(Sn) lead finish
- Cathode indicated by polarity band
- Packing code with suffix "G" means
Halogen-free
DO-35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
Forward Voltage @IF=200mA
PD 500
VF 1.1
Operating and Storage Temperature Range
TJ , TSTG
100
UNITS
mW
V
°C
Document Number: DS_S1410003
Version: E14

1 Page





1N5236B pdf, ピン配列
Small Signal Product
15
10
5
IZ = 5 mA
0
-5
0
10 20 30 40 50
VZ - Z-Voltage (V)
Fig. 5 Temperature Coefficient of Vz VS. Z-Voltage
200
150 VR = 2 V
Tj = 25oC
100
50
0
0 5 10 15 20 25
VZ - Z-Voltage (V)
Fig.6 Diode Capacitance VS. Z-Voltage
100
10
1 Tj = 25oC
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VF - Forward Voltage (V)
Figure 7. Forward Current VS. Forward Voltage
Document Number: DS_S1410003
1N5221B - 1N5263B
Taiwan Semiconductor
100
80
60
40
20
0
0
Ptot = 500 mW
Tamb = 25 oC
2468
VZ - Z-Voltage (V)
Fig.8 Z-Current VS. Z-Voltage
10
50
40
30
20
10
0
15
Ptot = 500 mW
Tamb = 25 °C
20 25 30
Fig. 9 Z-CVZu-rrZe-nVtoVltaSg.eZ(-VV)oltage
35
1000
IZ = 1 mA
100
5 mA
10
10 mA
1
Tj = 25oC
0 5 10 15 20 25
VZ - Z-Voltage (V)
Fig.10 Differential Z-Resistance VS. Z-Voltage
Version: E14


3Pages


1N5236B 電子部品, 半導体
Small Signal Product
1N5221B - 1N5263B
Taiwan Semiconductor
Device
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
Vz @ Izt
Voltage
Nominal
33
36
39
43
47
51
56
Current
IZT
(mA)
3.8
3.4
3.2
3.0
2.7
2.5
2.2
ZZT @ IZT
Max.
58
70
80
93
105
125
150
ZZK
@IZK=0.25mA
Max.
700
700
800
900
1000
1100
1300
IR @ VR
μA
Max.
0.1
0.1
0.1
0.1
0.1
0.1
0.1
VR
(Volts)
25
27
30
33
36
39
43
Notes: 1. Nominal zener voltages between the voltages shown and tighter voltage, for detalied information on
price, availability and delivery.
2. The zener voltage(VZ) is tested under pulse condition. The measured VZ is guaranteed to be within
specification with device junction in thermal equilibrium.
3. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having
an RMS value equal to 10% of the dc zener current (IZT) is superimposed to IZT.
Document Number: DS_S1410003
Version: E14

6 Page



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共有リンク

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