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XR1004-BD の電気的特性と機能

XR1004-BDのメーカーはMA-COMです、この部品の機能は「Receiver」です。


製品の詳細 ( Datasheet PDF )

部品番号 XR1004-BD
部品説明 Receiver
メーカ MA-COM
ロゴ MA-COM ロゴ 




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XR1004-BD Datasheet, XR1004-BD PDF,ピン配置, 機能
XR1004-BD
Receiver
30.0-46.0 GHz
Features
Sub-harmonic Receiver
Integrated LNA, LO Doubler/Buffer,
Image Reject Mixer
+4.0 dBm Input Third Order Intercept (IIP3)
+2.0 dBm LO Drive Level
9.0 dB Conversion Gain
3.5 dB Noise Figure
18.0 dB Image Rejection
100% On-Wafer RF, DC & Noise Figure Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s 30.0-46.0 GHz GaAs MMIC
receiver has a noise figure of 3.5 dB and 18.0 dB
image rejection across the band. This device is a
three stage LNA followed by an image reject
resistive pHEMT mixer and includes an integrated
LO doubler and LO buffer amplifer. The image reject
mixer eliminates the need for a bandpass filter after
the LNA to remove thermal noise at the image
frequency. The use of integrated LO doubler and LO
buffer amplifier makes the provision of the LO easier
than for fundamental mixers at these frequencies. I
and Q mixer outputs are provided and an external
90 degree hybrid is required to select the desired
sideband. This MMIC uses M/A-COM Tech’s GaAs
PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Ordering Information
Part Number
Package
XR1004-BD-000V
Where “V” is RoHS compli-
ant die packed in vacuum
released gel paks
XR1004-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Absolute Max.
Supply Voltage (Vd)
Supply Current (Id1,2), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
110,180 mA
+0.3 VDC
+5 dBm
-65 ºC to +165 ºC
-55 ºC to Table1
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is recommended to
keep channel temperature as low as possible for maximum life.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

1 Page





XR1004-BD pdf, ピン配列
XR1004-BD
Receiver
30.0-46.0 GHz
Typical Performance Curves
Rev. V1
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.


3Pages


XR1004-BD 電子部品, 半導体
XR1004-BD
Receiver
30.0-46.0 GHz
Rev. V1
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1,
Vd2 and Vd3 with Vd(1,2,3)=4.0V, Id1=Id2=25mA and Id3=145mA. Additionally, a mixer and doubler bias are
also required with Vg4=Vg5=-0.5V. Adjusting Vg4 and Vg5 above or below this value can adversely affect con-
version gain, image rejection and intercept point performance. It is also recommended to use active biasing to
keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. De-
pending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single
transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to
sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.
The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the
applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available be-
fore applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the
drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance
(~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2,3 and Vg1,2,3,4,5) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recom-
mended.
Typical Application
M/A-COM Tech's 30.0-46.0 GHz XR1004-BD GaAs MMIC Receiver can be used in saturated radio applications
and linear modulation schemes up to 128 QAM. The receiver can be used in upper and lower sideband applica-
tions from 30.0-46.0 GHz.
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

6 Page



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部品番号部品説明メーカ
XR1004-BD

Receiver

MA-COM
MA-COM


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