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PDF INJ0203BC1 Data sheet ( Hoja de datos )
| Número de pieza | INJ0203BC1 | |
| Descripción | Silicon P-channel MOSFET | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
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INJ0203BC1
Silicon P-channel MOSFET
DESCRIPTION
INJ0203BC1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
0.65
2.8
1.5
0.65
FEATURE
・Input impedance is high, and not necessary to
consider a drive electric current.
・Drive voltage -2.5V
・Low on Resistance. RDS(on)=100mΩ(TYP).
・Small package for easy mounting.
①
②③
Unit：ｍｍ
APPLICATION
Switching
MAXIMUM RATINGS（Ta=25℃）
Symbol
VDSS
VGSS
ID
IDP
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current(DC)
Drain current(Pulse) ※1
Total Power Dissipation
Rating
-20
-10
-2
-4
200
Unit
V
V
A
A
mW
Tch Channel Temperature
Tstg Storage Temperature
+150
℃
-55～+150 ℃
※1：Pw≦10μs, Duty cycle≦1%
JEITA：SC-59
JEDEC：Similar to TO-236
TERMINAL CONNECTER
①：GATE
②：SOURCE
③：DRAIN
EQUIVALENT CIRCUIT
D
G
MARKING
・J８
S
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Leak current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
RDS(ON)
Ciss
Coss
ton
toff
Test Condition
ID=-100μA, VGS=0V
VGS=±10V, VDS=0V
VDS=-20V ,VGS=0V
ID=-250μA, VDS=V GS
VDS=-10V, ID=-1A
ID=-1A, VGS=-4.5V
VDS=-10V, VGS=0V, f=1MHz
VDD=-15V, ID=-1A
VGS=0～-10V
MIN
Limit
TYP
MAX
Unit
-20 -
-
V
- - ±10 μA
- - -10 μA
-0.4 - -1.2 V
- 3.0 -
S
- 100 - mΩ
- 340 -
pF
- 90 - pF
- 230 -
- 940 -
ns
ns
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet INJ0203BC1.PDF ] | |
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