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PDF AP09N70P-A-HF Data sheet ( Hoja de datos )

Número de pieza AP09N70P-A-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP09N70P-A-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
AP09N70P-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
650V
RDS(ON)
0.75Ω
G ID 9A
S
Description
AP09N70 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance
and low package cost contribute to the worldwide popular
package.
G
D
S
TO-220
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
650 V
VGS Gate-Source Voltage
+30 V
ID@TC=25
Drain Current, VGS @ 10V
9A
ID@TC=100
IDM
Drain Current, VGS @ 10V
Pulsed Drain Current1
5A
40 A
PD@TC=25
EAS
Total Power Dissipation
Single Pulse Avalanche Energy2
156 W
40.5 mJ
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
0.8
62
Unit
/W
/W
1
201501126

1 page




AP09N70P-A-HF pdf
MARKING INFORMATION
AP09N70P-A-HF
09N70P
A
YWWSSS
Part Number
Package Code
Option
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
5

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