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HFP730SのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HFP730S |
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部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFP730Sダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Nov 2013
HFP730S
400V N-Channel MOSFET
BVDSS = 400 V
RDS(on) typ ȍ
ID = 6.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 17 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
6.0
3.6
24
ρ30
280
6.0
7.3
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
73
0.58
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.71
--
62.5
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͿΠΧ͑ͣͤ͑͢͡
1 Page Typical Characteristics
VGS
Top : 15.0 V
10.0 V
101 8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100 * Notes :
1. 250us Pulse Test
2. TC = 25oC
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 80V
VDS = 200V
8 VDS = 320V
6
4
2
Note : ID = 6.0A
0
0 4 8 12 16 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͿΠΧ͑ͣͤ͑͢͡
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͿΠΧ͑ͣͤ͑͢͡
6 Page | |||
ページ | 合計 : 8 ページ | ||
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