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HFP10N65UのメーカーはSemiHowです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | HFP10N65U |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | SemiHow | ||
ロゴ | |||
このページの下部にプレビューとHFP10N65Uダウンロード(pdfファイル)リンクがあります。 Total 8 pages
HFP10N65U
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 29 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.8 ȍ7\S#9GS=10V
100% Avalanche Tested
March 2013
BVDSS = 650 V
RDS(on) typ = 0.8 ȍ
ID = 9.5 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
9.5
6.0
38
ρ30
470
9.5
16.4
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
164
1.32
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.76
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
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1 Page Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101 6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 300us Pulse Test
2. TC = 25oC
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.4
1.2
VGS = 10V
1.0
0.8 VGS = 20V
Note : T = 25oC
J
0.6
0 3 6 9 12 15 18 21
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
2000
1600
1200
Ciss
Coss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
800 * Note ;
1. V = 0 V
GS
2. f = 1 MHz
400 Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
150oC
-55oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1
0.0
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 130V
DS
10 VDS = 325V
VDS = 520V
8
6
4
2
Note : I = 9.5A
D
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
3Pages Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
HFP10N65S | N-Channel MOSFET | SemiHow |
HFP10N65U | N-Channel MOSFET | SemiHow |