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Advanced Power
Electronics Corp.
AP60T03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP60T03 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
BVDSS
RDS(ON)
ID
30V
12mΩ
45A
GD
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
30
+20
45
32
120
44
0.3
2.4
-55 to 175
-55 to 175
V
V
A
A
A
W
W/℃
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
3.4
62.5
Data and specifications subject to change without notice
Units
℃/W
℃/W
1
201501298

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125
T C =25 o C
100
75
50
25
10V
8.0V
6.0V
5.0V
V G =4.0V
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
I D =15A
T C =25 ℃
60
40
20
0
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =175 o C
1
T j =25 o C
0.1
0 0.5 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP60T03GH-HF
90
T C =175 o C
60
10V
8.0V
6.0V
5.0V
30
V G =4.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =20A
V G =10V
1.6
1.2
0.8
0.4
-50 25 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.8
175
2.3
1.8
1.3
0.8
0.3
-50 25 100 175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3


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