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AP60T03GH-HF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 AP60T03GH-HF
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 

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AP60T03GH-HF Datasheet, AP60T03GH-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP60T03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP60T03 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
BVDSS
RDS(ON)
ID
30V
12m
45A
GD
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
30
+20
45
32
120
44
0.3
2.4
-55 to 175
-55 to 175
V
V
A
A
A
W
W/
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
3.4
62.5
Data and specifications subject to change without notice
Units
/W
/W
1
201501298

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