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Datasheet BZX84C51 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BZX84C51Zener Diodes

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes BZX84C2V4
MCC
MCC		diode
2BZX84C51SILIICON PLANAR VOLTAGE REGULATOR DIODE

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODE 3 2 1 3 Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE 12 BZX84C2V4 to 75V SOT-23 Formed SMD Package Low voltage general purpose voltage regulator diode ABSOLUTE
CDIL
CDIL		diode
3BZX84C51Surface Mount Zener Diodes

Surface Mount Zener Diodes Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V Mechanical Data: *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208 *Polarity: Cathode Indicated by Polarity Band *Marking: M
WEITRON
WEITRON		diode
4BZX84C51Zener Diode

BZX84CXXX Rev.F Mar.-2016 描述 / Descriptions SOT-23 塑封封装 稳压二极管。 Zener Diode in a SOT-23 Plastic Package.  特征 / Features 300mW 功耗，非常适合于自动化装配流程。 300mW power dissipation, Ideally Suited for Automated Assembly.  用途 / Applications 适用
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS		diode
5BZX84C51SURFACE MOUNT SILICON ZENER DIODES

BZX84C2V4 SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volt POWER 410 mWatt FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU dire
Pan Jit International
Pan Jit International		diode


BZX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
2BZX10Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
3BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
4BZX11Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
5BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
6BZX12Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
7BZX13Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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