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Datasheet MDP12N50F PDF ( 特性, スペック, ピン接続図 )

部品番号 MDP12N50F
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 
プレビュー
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MDP12N50F Datasheet, MDP12N50F PDF,ピン配置, 機能
MDP12N50F/MDF12N50F
N-Channel MOSFET 500V, 11.5A, 0.7
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 500V
ID = 11.5A
RDS(ON) 0.7Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
G
S`
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP12N50 MDF12N50
500
±30
.11.5
11.5*
7.0 7.0*
46 46*
165 42
1.33 0.32
16.5
4.5
460
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
MDP12N50
62.5
0.75
MDF12N50
62.5
3.0
Unit
oC/W
Dec. 2014 Version 1.4
1 MagnaChip Semiconductor Ltd.

1 Page



MDP12N50F pdf, ピン配列
12
11 Vgs=5.5V
=6.0V
10 =6.5V
=7.0V
9 =8.0V
8 =10.0V
=15.0V
7
6
5
4
3
2
1
Notes
1. 250Pulse Test
2. T =25
C
5 10 15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
20
3.0
Notes :
1. V = 10 V
2.5
GS
2. ID = 5.75A
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
1.2
1.0
VGS=10.0V
0.8
VGS=20V
0.6
0 5 10 15
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
1.2
Notes :
1. V = 0 V
GS
2. I = 250
D
1.1
1.0
0.9
0.8
-50
0 50 100 150
T , Junction Temperature [oC]
J
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
15025
-55
Notes :
1. V = 0 V
GS
2.250s Pulse test
10
150
25
1
2468
VGS [V]
Fig.5 Transfer Characteristics
10
Dec. 2014 Version 1.4
3
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.


3Pages


MDP12N50F 電子部品, 半導体
Physical Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
Dec. 2014 Version 1.4
6 MagnaChip Semiconductor Ltd.

6 Page





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