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MDP12N50F PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MDP12N50F
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 

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MDP12N50F Datasheet, MDP12N50F PDF,ピン配置, 機能
MDP12N50F/MDF12N50F
N-Channel MOSFET 500V, 11.5A, 0.7
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 500V
ID = 11.5A
RDS(ON) 0.7Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
G
S`
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP12N50 MDF12N50
500
±30
.11.5
11.5*
7.0 7.0*
46 46*
165 42
1.33 0.32
16.5
4.5
460
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
MDP12N50
62.5
0.75
MDF12N50
62.5
3.0
Unit
oC/W
Dec. 2014 Version 1.4
1 MagnaChip Semiconductor Ltd.

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