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PDF MMBT3906LP Data sheet ( Hoja de datos )

Número de pieza MMBT3906LP
Descripción 40V PNP SMALL SIGNAL TRANSISTOR
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MMBT3906LP
40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006
Features
BVCEO > -40V
IC = -200mA High Collector Current
PD = 1000mW Power Dissipation
0.60mm2 Package Footprint, 13 times Smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Complementary NPN Type MMBT3904LP
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
X1-DFN1006-3
B
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu,
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0008 grams (Approximate)
C
B
C
E
Bottom View
E
Device Symbol
Top View
Device Schematic
Ordering Information (Note 4)
Product
MMBT3906LP-7
MMBT3906LP-7B
Marking
3N
3N
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http//www.diodes.com/products/packages.html.
Marking Information
MMBT3906LP-7
From date code 1527 (YYWW),
3N this changes to:
3N
Top View
Dot Denotes Collector Side
Top View
Bar Denotes Base and Emitter Side
MMBT3906LP-7B
3N
Top View
Bar Denotes Base and Emitter Side
3N = Product Type Marking Code
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated

1 page




MMBT3906LP pdf
MMBT3906LP
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.20
0.16
IB = -1.6mA
IB = -1.4mA
IB = -1.8mA
IB = -1.2mA
IB = -2mA
0.12
0.08
IB = -1mA
IB = -0.8mA
IB = -0.6mA
0.04
IB = -0.4mA
IB = -0.2mA
0
01 2 3 45
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 10
400
350
300
250
TA = 150°C
TA = 125°C
TA = 85°C
200
150
TA = 25°C
VCE = 1V
100
50
TA = -55°C
0
1 10 100
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
IC/IB = 20
0.1 TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.01
1 10 100 1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
Gain = 10
1.0
0.1 TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.01
0.1 1
10 100 1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
Gain = 10
1.0
0.8 TA = -55°C
0.6 TA = 25°C
TA = 150°C
0.4 TA = 125°C
TA = 85°C
0.2
0.1 1
10 100 1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.8 TA = -55°C
0.6 TA = 25°C
TA = 150°C
0.4 TA = 125°C
TA = 85°C
0.2
0.1 1
10 100 1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
MMBT3906LP
Document number: DS31836 Rev. 7 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated

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