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Advanced Power
Electronics Corp.
AP2606CMT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
D
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
Description
S
AP2606C series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID4
25V
0.8mΩ
280A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V4(Package Limited)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
25
+20
280
100
60
50.5
650
104
5
45
-55 to 150
-55 to 150
V
V
A
A
A
A
A
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
℃/W
℃/W
1
201507091

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AP2606CMT
400
T C =25 o C
10V
7.0V
6.0V
300 5.0V
V G = 4.0V
200
100
0
0
0.4 0.8 1.2 1.6
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
200
T C = 150 o C
10V
7.0V
160 6.0V
5.0V
V G = 4.0V
120
80
40
0
001122
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.1
I D = 20 A
1 T C =25 o C
0.9
.0.8
0.7
0.6
0.5
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
1.8
I D =20A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
-100 -50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I D =1mA
1.6
150
1.2
0.8
0.4
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.0
-100
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3


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AP2606CMT
MARKING INFORMATION
2606C
YWWSSS
Part Number
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6

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