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Datasheet 2N6300 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N6300
部品説明 DARLINGTON SILICON POWER TRANSISTORS
メーカ Seme LAB
ロゴ Seme LAB ロゴ 
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2N6300 Datasheet, 2N6300 PDF,ピン配置, 機能
2N6300
2N6301
MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
12
6.35 (0.250)
8.64 (0.340)
DARLINGTON SILICON
POWER TRANSISTORS
Designed for general purpose
amplifier and low frequency
switching applications.
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
Pin 1 Base
TO–66 (TO-213AA)
Pin 2 Emitter
Case Collector
FEATURES
• High DC Current Gain
• Monolithic Construction with Built-in
Base–Emitter Shunt Resistors
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300
2N6301
VCEO
Collector – Emitter Voltage
60V 80V
VCBO
Collector – Base Voltage
60V 80V
VEBO
Emitter – Base Voltage
5V
IC Collector Current
Continuous
8A
Peak
16A
IB Base Current
PD Total Dissipation @ TC = 25°C
Derate above 25°C
120mA
100W
75W
0.571W/°C 0.428W/°C
TSTG , TJ
TθJC
Operating and Storage Junction Temperature Range
Thermal Resistance – Junction - Case
–65 to +200°C
1.75°C/W
2.33°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3979
Issue 1

1 Page



2N6300 pdf, ピン配列
2N6300
2N6301
ELECTRICAL CHARACTERISTICS 2N6301 (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
OFF CHARACTERISTICS
Collector Emitter Sustaining
VCEO(sus) Voltage 1
IC = 100mA
IB = 0
80
ICEO
ICEX
IEBO
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS 1
VCE = 40V
IB = 0
VCE = Rated VCB VBE(off) = 1.5V
TC = 150°C
VBE = 5V
IC = 0
hFE
VCE(sat)
VBE(sat)
VBE(on)
DC Current Gain
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
DYNAMIC CHARACTERISTICS
VCE = 3V
VCE = 3V
IC = 4A
IC = 8A
IC = 8A
VCE = 3V
IC = 4A
IC = 8A
IB = 16mA
IB = 80mA
IB = 80mA
IC = 4A
750
100
Cob Output Capacitance
VCB = 10V
f = 0.1MHz
IE = 0
hfe
Magnitude of Common Emitter
Small Signal Short Circuit Current
Transfer Ratio
VCE = 3V
IC = 3A
f = 1MHz
4.0
hfe Small Signal Current Gain
VCE = 3V
f = 1kHz
IC = 3A
300
Max. Unit
V
0.5 mA
0.5
mA
5.0
2 mA
18000
2.0
V
3.0
4.0 V
2.8 V
200 pF
Notes
1 Pulse test: tp = 300µs , Duty Cycle = 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3979
Issue 1


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