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Datasheet 2N6299 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N6299
部品説明 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
メーカ Central Semiconductor
ロゴ Central Semiconductor ロゴ 
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2N6299 Datasheet, 2N6299 PDF,ピン配置, 機能
2N6298 2N6299 PNP
2N6300 2N6301 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6298 series
devices are complementary silicon Darlington power
transistors manufactured by the epitaxial base process
designed for high gain amplifier and medium speed
switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
2N6298
2N6300
60
2N6299
2N6301
80
60 80
5.0
8.0
16
120
75
-65 to +200
2.33
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N6298, 2N6300)
60
BVCEO
IC=100mA (2N6299, 2N6301)
80
VCE(SAT) IC=4.0A, IB=16mA
VCE(SAT) IC=8.0A, IB=80mA
VBE(SAT) IC=8.0A, IB=80mA
VBE(ON)
VCE=3.0V, IC=4.0A
hFE VCE=3.0V, IC=4.0A
750
hFE VCE=3.0V, IC=8.0A
100
hfe VCE=3.0V, IC=3.0A, f=1.0kHz
300
fT VCE=3.0V, IC=3.0A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=100kHz (NPN types)
Cob VCB=10V, IE=0, f=100kHz (PNP types)
MAX
0.5
5.0
0.5
2.0
2.0
3.0
4.0
2.8
18K
200
300
UNITS
V
V
V
A
A
mA
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
MHz
pF
pF
R3 (2-September 2014)

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