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PDF 1N3595 Data sheet ( Hoja de datos )

Número de pieza 1N3595
Descripción SILICON LOW LEAKAGE DIODE
Fabricantes Central Semiconductor　
Logotipo Central Semiconductor Logotipo



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No Preview Available ! 1N3595 Hoja de datos, Descripción, Manual

1N3595
SILICON LOW LEAKAGE DIODE
JEDEC DO-35 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high
conductance applications. Higher breakdown voltage devices are available on special order.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
Peak Working Reverse Voltage
Average Forward Current
Forward Steady-State Current
Recurrent Peak Forward Current
Peak Forward Surge Current (1.0s pulse)
Peak Forward Surge Current (1.0µs pulse)
Power Dissipation
Operating and Storage
Junction Temperature
VRRM
VRWM
IO
IF
if
IFSM
IFSM
PD
TJ,Tstg
150
125
150
225
600
500
4.0
500
-65 to +200
V
V
mA
mA
mA
mA
A
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
IR
IR
IR
IR
BVR
VF
VF
VF
VF
VF
VF
CT
trr
TEST CONDITIONS
VR=125V
VR=125V, TA=125°C
VR=125V, TA=150°C
VR=30V, TA=125°C
IR=100µA
IF=1.0mA
IF=5.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
VR=0, f=1.0MHz
VR=3.5V, If=10mA, RL=1.0kΩ
MIN
MAX
UNITS
1.0
500
3.0
300
150
0.54 0.69
0.62 0.77
0.65 0.80
0.75 0.88
0.79 0.92
0.83 1.0
8.0
3.0
nA
nA
µA
nA
V
V
V
V
V
V
V
pF
µs
(SEE REVERSE SIDE)
R1

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