|
|
Datasheet 1N5833 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5833 | Silicon Power Schottky Diode Silicon Power Schottky Diode
Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N5832 thru 1N5834R
VRRM = 20 V - 40 V IF(AV) = 40 A
DO-5 Package
Maximum rati |  GeneSiC | diode |
| 2 | 1N5833 | SCHOTTKY DIODES Transys
Electronics
LIMITED
1N5832(R) THRU
1N5834(R)
SCHOTTKY DIODES STUD TYPE
Features
High Surge Capability
Types up to 40V V RRM
40 A
40Amp Rectifier 20-40 Volts
Maximum Ratings
Operating Temperature: -65 C to +150
Storage Temperature: -65 C to +175
Part Number
1N5832(R) 1N5833(R) 1N5834(R)
|  TRANSYS | diode |
| 3 | 1N5833 | SCHOTTKY RECTIFIERS 1N5832-1N5834
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and |  Digitron Semiconductors | rectifier |
| 4 | 1N5833 | 40 Amp Schottky Rectifier |  Microsemi Corporation | rectifier |
| 5 | 1N5833 | Schottky Power Diode Naina Semiconductor Ltd.
Schottky Power Diode, 40A
Features
• • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
1N5832 thru 1N5834R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted) Paramet |  Naina Semiconductor | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
| Esta página es del resultado de búsqueda del 1N5833. Si pulsa el resultado de búsqueda de 1N5833 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |