|
|
1N582XのメーカーはSTMicroelectronicsです、この部品の機能は「LOW DROP POWER SCHOTTKY RECTIFIER」です。 |
部品番号 | 1N582X |
| |
部品説明 | LOW DROP POWER SCHOTTKY RECTIFIER | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューと1N582Xダウンロード(pdfファイル)リンクがあります。 Total 5 pages
® 1N582x
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
Tj
VF (max)
3A
40 V
150°C
0.475 V
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.
DO-201AD
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current
TL = 100°C
δ = 0.5
TL = 110°C
δ = 0.5
Surge non repetitive forward current tp = 10 ms
Sinusoidal
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
1N5820 1N5821 1N5822
20 30 40
10
3
33
80
- 65 to + 150
150
10000
*
:
dPtot
dTj
<
1
Rth(j−a)
thermal
runaway condition for a diode on its own heatsink
Unit
V
A
A
A
A
°C
°C
V/µs
July 1999 - Ed: 2A
1/5
1 Page Fig. 2-1: Average forward current versus ambient
temperature (δ=0.5) (1N5820/1N5821).
1N582x
Fig. 2-2: Average forward current versus ambient
temperature (δ=0.5) (1N5822).
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)=25°C/W
2.5
2.0 Rth(j-a)=80°C/W
1.5
1.0 T
0.5
δ=tp/T
tp
Tamb(°C)
0.0
0
25 50 75 100 125 150
IF(av)(A)
3.5
3.0
Rth(j-a)=Rth(j-l)=25°C/W
2.5
2.0
Rth(j-a)=80°C/W
1.5
1.0
T
0.5
0.0
0
δ=tp/T
tp
25
Tamb(°C)
50 75
100
125
150
Fig. 3-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821).
IM(A)
16
14
12
10
8
6
4
IM
2
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
Ta=25°C
Ta=75°C
Ta=100°C
1E+0
Fig. 3-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).
IM(A)
12
11
10
9
8
7
6
5
4
3
IM
2
1
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Ta=25°C
Ta=75°C
Ta=100°C
1E+0
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-1
1E+0
tp(s)
1E+1
T
δ=tp/T
1E+2
tp
1E+3
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
600
100
1N5820
1N5822
F=1MHz
Tj=25°C
1N5821
10
12
VR(V)
5 10 20 40
3/5
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ 1N582X データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N5820 | SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20/ 30/ 40 VOLTS | MotorolaInc |
1N5820 | 3 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Amperes) | Pan Jit International Inc. |
1N5820 | 3 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 3.0 Ampere | Surge Components |
1N5820 | 3 AMPERE SCHOTTKY BARRIER RECTIFIER | TRSYS |