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IS61LPS25636A の電気的特性と機能

IS61LPS25636AのメーカーはISSIです、この部品の機能は「Single CYCLE DESELECT STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS61LPS25636A
部品説明 Single CYCLE DESELECT STATIC RAM
メーカ ISSI
ロゴ ISSI ロゴ 




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IS61LPS25636A Datasheet, IS61LPS25636A PDF,ピン配置, 機能
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
256K x 36, 256K x 32, 512K x 18
9 Mb SYNCHRONOUS PIPELINED,
Single CYCLE DESELECT STATIC RAM
JANUARY 2014
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth ex-
pansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for BGA package
• Power Supply
LPS: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%
VPS: Vdd 2.5V + 5%, Vddq 2.5V + 5%
• JEDEC 100-Pin QFP, 119-ball BGA, and 165-
ball BGA packages
• Lead-free available
FAST ACCESS TIME
Symbol Parameter
tkq
Clock Access Time
tkc
Cycle Time
Frequency
DESCRIPTION
The  ISSI IS61LPS/VPS25636A, IS61LPS25632A,
IS64LPS25636A and IS61LPS/VPS51218A are high-
speed, low-power synchronous static RAMs designed
to provide burstable, high-performance memory for com-
munication and networking applications. The IS61LPS/
VPS25636A and IS64LPS25636A are organized as
262,144 words by 36 bits. The IS61LPS25632A is
organized as 262,144 words by 32 bits. The IS61LPS/
VPS51218A is organized as 524,288 words by 18 bits.
Fabricated with ISSI's advanced CMOS technology,
the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (BWE) input combined with one or more
individual byte write signals (BWx). In addition, Global
Write (GW) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence or-
der, Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH
or left floating.
250 200 166
2.6 3.1 3.5
4 5 6
250 200 166
Units
ns
ns
MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. 1
Rev. M
01/14/14

1 Page





IS61LPS25636A pdf, ピン配列
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
165-pin BGA
165-Ball, 13x15 mm BGA
119-pin BGA
119-Ball, 14x22 mm BGA
Bottom view
Bottom View
Integrated Silicon Solution, Inc.
Rev. M
01/14/14
3


3Pages


IS61LPS25636A 電子部品, 半導体
IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
165 BGA PACKAGE PIN CONFIGURATION
256K x 36 (TOP VIEW)
1 2 3 45
A NC
A
CE
BWc
BWb
B NC
A
CE2
BWd
BWa
C DQPc NC Vddq Vss Vss
D
DQc
DQc
Vddq
Vdd
Vss
E
DQc
DQc
Vddq
Vdd
Vss
F
DQc
DQc
Vddq
Vdd
Vss
G
DQc
DQc
Vddq
Vdd
Vss
H NC Vss NC Vdd Vss
J
DQd
DQd
Vddq
Vdd
Vss
K
DQd
DQd
Vddq
Vdd
Vss
L
DQd
DQd
Vddq
Vdd
Vss
M
DQd
DQd
Vddq
Vdd
Vss
N DQPd
NC
Vddq
Vss
NC
P NC NC A
A TDI
R MODE NC
A
A TMS
6
CE2
CLK
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
A1*
A0*
7
BWE
GW
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
TDO
TCK
8
ADSC
OE
Vss
Vdd
Vdd
Vdd
Vdd
Vdd
Vdd
Vdd
Vdd
Vdd
Vss
A
A
9
ADV
ADSP
Vddq
Vddq
Vddq
Vddq
Vddq
NC
Vddq
Vddq
Vddq
Vddq
Vddq
A
A
10
A
A
NC
DQb
DQb
DQb
DQb
NC
DQa
DQa
DQa
DQa
NC
A
A
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
11
NC
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQa
DQa
DQa
DQa
DQPa
A
A
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
A0, A1
Synchronous Burst Address Inputs
ADV
Synchronous Burst Address
Advance
ADSP
Address Status Processor
ADSC
Address Status Controller
GW
Global Write Enable
CLK
Synchronous Clock
CE, CE2, CE2 Synchronous Chip Select
BWx (x=a,b,c,d) Synchronous Byte Write
Controls
Symbol
BWE
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQx
DQPx
Vdd
Vddq
Vss
Pin Name
Byte Write Enable
Output Enable
Power Sleep Mode
Burst Sequence Selection
JTAG Pins
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
Isolated Output Power Supply
3.3V/2.5V
Ground
6 Integrated Silicon Solution, Inc.
Rev. M
01/14/14

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IS61LPS25636A

Single CYCLE DESELECT STATIC RAM

ISSI
ISSI
IS61LPS25636D

256Kx32 Synchronous Pipelined Static RAM

ISSI
ISSI
IS61LPS25636T

256Kx32 Synchronous Pipelined Static RAM

ISSI
ISSI


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